M324R2GA3DB0-CWM Samsung 16GB DDR5-5600 ECC UDIMM 1Rx8 1.1V Memory
Key Specifications for M324R2GA3DB0-CWM
Part Number: M324R2GA3DB0-CWM
Manufacturer: Samsung
Memory Size: 16GB
Memory Speed: DDR5-5600
Rank & Organization: 1Rx8
Form Factor: UDIMM
JEDEC Specification: PC5-44800E
Why Choose Us?
Product Description
Upgrade Your Server with Samsung Memory Solutions
Maximize your server's potential with the M324R2GA3DB0-CWM Samsung 16GB DDR5-5600 ECC UDIMM 1Rx8 1.1V module. Engineered by Samsung—a globally recognized leader in memory technology—this module delivers a carefully balanced mix of speed, capacity, and energy efficiency for modern IT environments, including enterprise data centers, telecom operations, and cloud infrastructures, this cutting-edge memory module delivers unprecedented speed, improved reliability, and optimized energy efficiency—designed for next-generation workloads such as AI computing, high-performance cloud applications, and modern data centers.
What Sets Samsung Apart
- Renowned Brand: Samsung is a trusted name in high-performance memory solutions, relied upon by leading server OEMs worldwide.
- Certified Quality: Each module undergoes stringent Samsung testing to ensure robust performance and long-term reliability.
- Ease of Integration: Built to meet or exceed industry standards, this memory fits seamlessly into servers supporting DDR5-5600 ECC UDIMM.
JEDEC Compliance
This memory module is certified to meet JEDEC Specification: PC5-44800E, adhering to globally recognized standards for memory performance and compatibility. These standards ensure optimal operation and seamless integration in high-performance environments. Learn more about JEDEC standards.
Optimized for Critical Applications
- Error Correction (ECC): Minimizes data corruption and ensures system stability for critical workloads.
- Advanced Technology: Features UDIMM (Unbuffered DIMM) architecture with Single Rank x8 Chip Organization, designed for multitasking and efficient data processing.
- High-Speed Performance: Operates at 5600 MHz with a CAS Latency (CL) of 46, delivering smooth multitasking, quick data access, and superior processing efficiency.
- Wide Temperature Range: Performs reliably in challenging conditions with an operating range of 0°C to 95°C making it suitable for high-density servers and extreme environments.
- Versatile Use Cases: Designed for next-generation high-performance computing, AI workloads, and cloud applications, this DDR5 module ensures seamless multitasking and extreme processing power in demanding IT environments.
Unmatched Value
Invest in genuine Samsung modules to ensure top-tier reliability, stable performance, and straightforward scalability for your server infrastructure—helping you tackle demanding workloads confidently.
Order your Samsung M324R2GA3DB0-CWM today to experience dependable performance and unlock new levels of efficiency in your server environment.
Technical Specifications
Manufacturer | Samsung |
---|---|
Part Number | M324R2GA3DB0-CWM |
Memory Size | 16GB |
Memory Speed | DDR5-5600 |
Memory Technology | DDR5 |
Speed | 5600 |
Rank and Organization | 1Rx8 |
Rank Type | Single Rank |
Chip Organization | x8 |
Error Correction (ECC) | ECC |
CAS Latency | CL46 |
DIMM Type | Unbuffered |
Form Factor | UDIMM |
Voltage | 1.1V |
Pins | 288 |
Height | STD |
JEDEC Specification | PC5-44800E |
Temperature | 0°C to 95°C |
Compatible Systems for M324R2GA3DB0-CWM
FAQ
Still have questions about this memory module? Contact us for advice or to request a custom quote for your system.