M323R2GA3EB0-CWM Samsung 16GB DDR5-5600 ECC UDIMM 1Rx8 1.1V Memory
16GBDDR5-5600UDIMM1Rx81.1V
SKU: M323R2GA3EB0-CWM
$ 299
≈ €254
🟢 250 pcs available · Lead time: 2-3 Days · Updated 21 Aug 2026
More stock for this part
QuantityPriceShips InUpdated
100 pcs$262Lead time 5-6 daysUpdated 24 Aug 2026
800 pcs$262Lead time 5-6 daysUpdated 24 Aug 2026
1750 pcs$262Lead time 5-6 daysUpdated 24 Aug 2026
Stock pcs$266Lead time 5-6 daysUpdated 24 Aug 2026
250 pcs$272Lead time 1-2 daysUpdated 18 Aug 2026
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Tier-1 Memory
Samsung, Micron & SK Hynix
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Overview
- Samsung M323R2GA3EB0-CWM – 16GB DDR5-5600 ECC Unbuffered DIMM
High-capacity, high-speed DDR5 server memory from Samsung, designed for entry-level virtualization, edge compute, and small-scale servers. JEDEC PC5-44800E compliant. - Compatible with Major Server Brands
Built with Single Rank x8 architecture, this Samsung UDIMM works flawlessly in servers from Dell, HPE, Lenovo, Cisco, and others that support DDR5-5600 ECC Unbuffered memory. - Optimized Performance
Delivers 5600 MT/s with CL46 latency at 1.1V. - Genuine Samsung Quality
Manufacturer-grade reliability, backed by warranty. Trusted in datacenters, telecom networks, and enterprise IT environments worldwide.
M323R2GA3EB0-CWM Specifications
| Manufacturer | Samsung |
|---|---|
| Part Number | M323R2GA3EB0-CWM |
| Memory Size | 16GB |
| Memory Speed | DDR5-5600 |
| Memory Technology | DDR5 |
| Speed | 5600 |
| Rank and Organization | 1Rx8 |
| Rank Type | Single Rank |
| Chip Organization | x8 |
| Error Correction (ECC) | ECC |
| CAS Latency | CL46 |
| DIMM Type | Unbuffered |
| Form Factor | UDIMM |
| Voltage | 1.1V |
| Pins | 288 |
| Height | STD |
| JEDEC Specification | PC5-44800E |
| Temperature | 0°C to 95°C |
Compatible Systems
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